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FCP11N60N / FCPF11N60NT N-Channel MOSFET
FCP11N60N / FCPF11N60NT
N-Channel MOSFET
600V, 10.8A, 0.299 Features
* RDS(on) = 0.255 ( Typ.)@ VGS = 10V, ID = 5.4A * Ultra Low Gate Charge ( Typ. Qg = 27.4nC) * Low Effective Output Capacitance * 100% Avalanche Tested * RoHS Compliant
TM SupreMOS
tm
August 2009
Description
The SupreMOS MOSFET, Fairchild's next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry's AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
D
GDS
TO-220 FCP Series
G GD S
TO-220F FCPF Series
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy MOSFET dv/dt Ruggedness Peak Diode Recovery dv/dt Power Dissipation - Derate above 25oC (TC = 25oC) (Note 3) 94.0 0.75 300 -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) -Continuous (TC = 25oC) 10.8 6.8 32.4 201.7 3.7 0.94 100 20 32.1 0.26 -55 to +150 FCP11N60N FCPF11N60NT 600 30 10.8* 6.8* 32.4* Units V V A A mJ A mJ V/ns V/ns W W/oC
o o
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
C C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Heat Sink (Typical) Thermal Resistance, Junction to Ambient FCP11N60N FCPF11N60NT 1.33 0.5 62.5 3.9 0.5 62.5
o
Units C/W
(c)2009 Fairchild Semiconductor Corporation FCP11N60N / FCPF11N60NT Rev. A
1
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FCP11N60N / FCPF11N60NT N-Channel MOSFET
Package Marking and Ordering Information
Device Marking FCP11N60N FCPF11N60NT Device FCP11N60N FCPF11N60NT Package TO-220 TO-220F Reel Size Tape Width Quantity 50 50
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 1mA, VGS = 0V, TC = 25oC ID = 1mA, Referenced to 25oC VDS = 480V, VGS = 0V VGS = 30V, VDS = 0V VDS = 480V, VGS = 0V, TC = 125oC 600 0.73 10 100 100 V V/oC A nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 5.4A VDS = 40V, ID = 5.4A 2.0 0.255 13.5 4.0 0.299 V S
Dynamic Characteristics
Ciss Coss Crss Coss Cosseff. Qg(tot) Qgs Qgd ESR Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge Equivalent Series Resistance (G-S) VDS = 380V, ID = 5.4A, VGS = 10V Drain Open VDS = 100V, VGS = 0V f = 1MHz VDS = 380V, VGS = 0V, f = 1MHz VDS = 0V to 480V, VGS = 0V (Note 4)
1130 45 3 25 130 27.4 4.9 8.8 2.0
1505 60 5 35.6 -
pF pF pF pF pF nC nC nC
-
Switching Characteristics
td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 380V, ID = 5.4A RG = 4.7
(Note 4)
-
13.6 9.1 42.0 10.0
37.2 28.2 94.0 30.0
ns ns ns ns
Drain-Source Diode Characteristics
IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 5.4A VGS = 0V, ISD = 5.4A dIF/dt = 100A/s 268 3.1 10.8 32.4 1.2 A A V ns C
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 3.7A, RG = 25, Starting TJ = 25C 3. ISD 10.8A, di/dt 200A/s, VDD = 380V, Starting TJ = 25C 4. Essentially Independent of Operating Temperature Typical Characteristics
FCP11N60N / FCPF11N60NT Rev. A
2
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FCP11N60N / FCPF11N60NT N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
100
VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V
Figure 2. Transfer Characteristics
60
ID, Drain Current[A]
10
ID, Drain Current[A]
10
150 C
o
25 C -55 C
o
o
1
*Notes: 1. 250s Pulse Test
1
0.1 0.1
2. TC = 25 C
o
1 VDS, Drain-Source Voltage[V]
10
20
0.1
*Notes: 1. VDS = 20V 2. 250s Pulse Test
2
4 6 VGS, Gate-Source Voltage[V]
8
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
0.7
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
100
RDS(ON) [], Drain-Source On-Resistance
IS, Reverse Drain Current [A]
0.6
0.5
VGS = 10V
150 C
o
10
25 C
o
0.4
VGS = 20V
0.3
*Notes: TC = 25 C
o
*Notes: 1. VGS = 0V
0.2
0
8
16 24 ID, Drain Current [A]
32
1 0.4
2. 250s Pulse Test
0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V]
1.4
Figure 5. Capacitance Characteristics
6000
VGS, Gate-Source Voltage [V]
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
10
8
Capacitances [pF]
4000
Coss *Notes: 1. VGS = 0V 2. f = 1MHz
VDS = 120V VDS = 300V VDS = 480V
6
4
2000
Ciss
2
*Notes: ID = 5.4A
Crss
0 0.1
1 10 100 VDS, Drain-Source Voltage [V]
600
0
0
5
10 15 20 25 Qg, Total Gate Charge [nC]
30
FCP11N60N / FCPF11N60NT Rev. A
3
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FCP11N60N / FCPF11N60NT N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage
RDS(on), [Normalized] Drain-Source On-Resistance
Figure 8. On-Resistance Variation vs. Temperature
3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100
*Notes: 1. VGS = 10V 2. ID = 5.4A
1.1
1.0
0.9
*Notes: 1. VGS = 0V 2. ID = 1mA
0.8 -100
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
Figure 9. Maximum Safe Operating Area _ FCP11N60N
50
20s 100s
Figure 10. Maximum Safe Operating Area _ FCPF11N60NT
100
20s 100s 1ms
ID, Drain Current [A]
ID, Drain Current [A]
10
1ms 10ms
10
1
Operation in This Area is Limited by R DS(on) *Notes:
DC
1
Operation in This Area is Limited by R DS(on)
10ms
DC
0.1
1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
o
0.1
*Notes: 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
0.01 0.1
10 100 VDS, Drain-Source Voltage [V]
1
1000
0.01 0.1
1 10 100 VDS, Drain-Source Voltage [V]
1000
Figure 11. Maximum Drain Current vs. Case Temperature
12
ID, Drain Current [A]
9
6
3
0 25
50 75 100 125 o TC, Case Temperature [ C]
150
FCP11N60N / FCPF11N60NT Rev. A
4
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FCP11N60N / FCPF11N60NT N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve _ FCP11N60N
2
Thermal Response [ZJC]
1
0.5
0.2 0.1
PDM t1 t2
o
0.1
0.05 0.02 0.01 Single pulse
*Notes: 1. ZJC(t) = 1.33 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t)
0.01 -5 10
10
-4
10 10 Rectangular Pulse Duration [sec]
-3
-2
10
-1
1
Figure 13. Transient Thermal Response Curve _ FCPF11N60NT
5
Thermal Response [ZJC]
0.5
1
0.2 0.1 0.05
PDM t1 t2
o
0.1
0.02 0.01 Single pulse
*Notes:
1. ZJC(t) = 3.3 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t)
-4
0.01 -5 10
10
10
-3
10 10 1 Rectangular Pulse Duration [sec]
-2
-1
10
10
2
10
3
FCP11N60N / FCPF11N60NT Rev. A
5
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FCP11N60N / FCPF11N60NT N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FCP11N60N / FCPF11N60NT Rev. A
6
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FCP11N60N / FCPF11N60NT N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ V
DS
_ I
SD
L D r iv e r R
G
S am e T ype as DUT
V
DD
V
GS
* d v / d t c o n t r o lle d b y R G * I S D c o n t r o lle d b y p u ls e p e r io d
V GS ( D r iv e r )
G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD (DUT ) IR M
d i/ d t
B o d y D io d e R e v e r s e C u r r e n t
V DS (DUT )
B o d y D io d e R e c o v e r y d v / d t
V
SD
V
DD
B o d y D io d e F o r w a r d V o lt a g e D r o p
FCP11N60N / FCPF11N60NT Rev. A
7
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FCP11N60N / FCPF11N60NT N-Channel MOSFET
Mechanical Dimensions
TO-220
Dimensions in Millimeters
FCP11N60N / FCPF11N60NT Rev. A
8
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FCP11N60N / FCPF11N60NT N-Channel MOSFET
Mechanical Dimensions
TO-220F
Dimensions in Millimeters
FCP11N60N / FCPF11N60NT Rev. A
9
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FCP11N60N / FCPF11N60NT N-Channel MOSFET
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Rev. I41
FCP11N60N / FCPF11N60NT Rev. A
10
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